| PART |
Description |
Maker |
| E28F004S5-85 E28F004S5-120 28F016S5 28F008S5 E28F0 |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT
12V/5V Input Buck PWM Controller
Evaluation Kit/Evaluation System for the MAX5946A, MAX5946L
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 1M X 8 FLASH 5V PROM, 85 ns, PDSO44
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 5V PROM, 100 ns, PDSO44
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 1M X 8 FLASH 5V PROM, 100 ns, PDSO44
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 5V PROM, 120 ns, PDSO44
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| PA28F004S3-120 PA28F004S3-150 PA28F008S3-120 PA28F |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
| TE28F016S5-110 PA28F004S5-120 PA28F004S5-85 PA28F0 |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4 8 AND 16 MBIT
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
| 28F016S3 |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
Intel
|
| 28F008S3 28F016S3 |
3 V FlashFile Memory(3V闪速存储器)
|
Intel Corp.
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| HM530281RTT-34 HM530281RTT-45 HM530281RTT-20 HM530 |
34ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
25ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
20ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
331,776-word x 8-bit Frame Memory
|
Hitachi Semiconductor
|
| HM530281 HM530281TT HM530281TT-20 HM530281TT-25 HM |
331776 WORD X 8 BIT FRAME MEMORY
331,776 WORD X 8 BIT FRAME MEMORY
|
HITACHI[Hitachi Semiconductor]
|
| M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位（8388608字由16位）的CMOS闪存
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| HN29WB800R-10 HN29WB800R-12 HN29WB800R-8 HN29WB800 |
1048576-WORD X 8-BIT / 524288-WORD X 16-BIT CMOS FLASH MEMORY
|
Hitachi Semiconductor
|
| M5M29KE131BTP |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
|
Renesas Electronics Corporation.
|
|
